MOSFET N-CH 50V 0.1A 3CP 2SK536-MTK-TB-E
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Description:
MOSFET N-CH 50V 0.1A 3CP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
2SK536-MTK-TB-E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22466,Price reference "real-time change" China/Hongkong。 2SK536-MTK-TB-E package/specs, Download 2SK536-MTK-TB-E、Datasheet。