POWER MOSFET, N-CHANNEL, SUPERFE NTHL125N65S3H
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Description:
POWER MOSFET, N-CHANNEL, SUPERFE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHL125N65S3H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26025,Price reference "real-time change" China/Hongkong。 NTHL125N65S3H package/specs, Download NTHL125N65S3H、Datasheet。