MOSFET N-CH 500V 2.6A IPAK FQU4N50TU-WS
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Description:
MOSFET N-CH 500V 2.6A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU4N50TU-WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory57855,Price reference "real-time change" China/Hongkong。 FQU4N50TU-WS package/specs, Download FQU4N50TU-WS、Datasheet。