MOSFET N-CH 200V 19.4A TO220-3 FQP19N20
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Description:
MOSFET N-CH 200V 19.4A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQP19N20(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20186,Price reference "real-time change" China/Hongkong。 FQP19N20 package/specs, Download FQP19N20、Datasheet。