MOSFET N-CH 30V 6.5/8A SUPERSOT6 FDC8886
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Description:
MOSFET N-CH 30V 6.5/8A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC8886(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5039,Price reference "real-time change" China/Hongkong。 FDC8886 package/specs, Download FDC8886、Datasheet。