MOSFET N-CH 650V 15A TO262-3 SPI15N60C3HKSA1
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Description:
MOSFET N-CH 650V 15A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPI15N60C3HKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory47305,Price reference "real-time change" China/Hongkong。 SPI15N60C3HKSA1 package/specs, Download SPI15N60C3HKSA1、Datasheet。