MOSFET N-CH 800V 1A IPAK FQU1N80TU
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Description:
MOSFET N-CH 800V 1A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQU1N80TU(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33572,Price reference "real-time change" China/Hongkong。 FQU1N80TU package/specs, Download FQU1N80TU、Datasheet。