MOSFET N-CH 500V 16A TO3P FQA16N50-F109
The pictures are for reference only
Description:
MOSFET N-CH 500V 16A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
FQA16N50-F109(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12817,Price reference "real-time change" China/Hongkong。 FQA16N50-F109 package/specs, Download FQA16N50-F109、Datasheet。