MOSFET N-CH 100V 128A TO220-3 FDP4D5N10C
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Description:
MOSFET N-CH 100V 128A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDP4D5N10C(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14924,Price reference "real-time change" China/Hongkong。 FDP4D5N10C package/specs, Download FDP4D5N10C、Datasheet。