FET 120V 4.2 MOHM PQFN88 FDMT800120DC-22897
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Description:
FET 120V 4.2 MOHM PQFN88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDMT800120DC-22897(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory83224,Price reference "real-time change" China/Hongkong。 FDMT800120DC-22897 package/specs, Download FDMT800120DC-22897、Datasheet。