MOSFET N-CH 20V 16A 8SOIC FDS6572A
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Description:
MOSFET N-CH 20V 16A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS6572A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8268,Price reference "real-time change" China/Hongkong。 FDS6572A package/specs, Download FDS6572A、Datasheet。