MOSFET N-CH 100V 540MA SOT223-4 FDT461N
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Description:
MOSFET N-CH 100V 540MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDT461N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1554,Price reference "real-time change" China/Hongkong。 FDT461N package/specs, Download FDT461N、Datasheet。