MOSFET N-CH 200V 2.7A DPAK IRLR210ATM
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Description:
MOSFET N-CH 200V 2.7A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRLR210ATM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15143,Price reference "real-time change" China/Hongkong。 IRLR210ATM package/specs, Download IRLR210ATM、Datasheet。