MOSFET N-CH 200V 7.6A TO252 FQD10N20LTF
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Description:
MOSFET N-CH 200V 7.6A TO252
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD10N20LTF(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73646,Price reference "real-time change" China/Hongkong。 FQD10N20LTF package/specs, Download FQD10N20LTF、Datasheet。