MOSFET N-CH 100V 16A IPAK HUF75617D3
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Description:
MOSFET N-CH 100V 16A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUF75617D3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7641,Price reference "real-time change" China/Hongkong。 HUF75617D3 package/specs, Download HUF75617D3、Datasheet。