MOSFET N-CH 30V 9.6A/58A DPAK NTD4809NHT4G
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Description:
MOSFET N-CH 30V 9.6A/58A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4809NHT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory36488,Price reference "real-time change" China/Hongkong。 NTD4809NHT4G package/specs, Download NTD4809NHT4G、Datasheet。