MOSFET N-CH 500V 3A IPAK NDD04N50Z-1G
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Description:
MOSFET N-CH 500V 3A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDD04N50Z-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10797,Price reference "real-time change" China/Hongkong。 NDD04N50Z-1G package/specs, Download NDD04N50Z-1G、Datasheet。