MOSFET N-CH 40V 9.2A 8SOIC NTMS5835NLR2G
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Description:
MOSFET N-CH 40V 9.2A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS5835NLR2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15813,Price reference "real-time change" China/Hongkong。 NTMS5835NLR2G package/specs, Download NTMS5835NLR2G、Datasheet。