MOSFET N-CH 200V 30A D2PAK NTBV30N20T4G
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Description:
MOSFET N-CH 200V 30A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTBV30N20T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39971,Price reference "real-time change" China/Hongkong。 NTBV30N20T4G package/specs, Download NTBV30N20T4G、Datasheet。