MOSFET N-CH 60V 120A D2PAK NVB5426NT4G
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Description:
MOSFET N-CH 60V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVB5426NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93376,Price reference "real-time change" China/Hongkong。 NVB5426NT4G package/specs, Download NVB5426NT4G、Datasheet。