MOSFET N-CH 30V 10A/63A DPAK NVD4808NT4G
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Description:
MOSFET N-CH 30V 10A/63A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD4808NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84527,Price reference "real-time change" China/Hongkong。 NVD4808NT4G package/specs, Download NVD4808NT4G、Datasheet。