MOSFET BVDSS: 61V~100V POWERDI10 DMTH10H1M7STLWQ-13
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Description:
MOSFET BVDSS: 61V~100V POWERDI10
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMTH10H1M7STLWQ-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16631,Price reference "real-time change" China/Hongkong。 DMTH10H1M7STLWQ-13 package/specs, Download DMTH10H1M7STLWQ-13、Datasheet。