MOSFET BVDSS: 25V~30V POWERDI506 DMT32M4LPSW-13
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Description:
MOSFET BVDSS: 25V~30V POWERDI506
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMT32M4LPSW-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19408,Price reference "real-time change" China/Hongkong。 DMT32M4LPSW-13 package/specs, Download DMT32M4LPSW-13、Datasheet。