MOSFET P-CH 20V 4.3A 8-SOIC DI9405T
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Description:
MOSFET P-CH 20V 4.3A 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DI9405T(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26309,Price reference "real-time change" China/Hongkong。 DI9405T package/specs, Download DI9405T、Datasheet。