TK31V60W5,LVQ parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Toshiba

Model:

TK31V60W5,LVQ

Description:

MOSFET N-CH 600V 30.8A 4DFN

Stock:

14916

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.75

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Parameters

Current at 25 ° C - continuous drain (Id)

30.8A(Ta)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

105 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

3000 pF @ 300 V

On resistance (maximum) for different Ids and Vgs

109 mΩ @ 15.4A,10V

Power dissipation (maximum)

240W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4.5V @ 1.5mA

packing

TR,CT

series

DTMOSIV

technology

MOSFET(Metal oxide)

working temperature

150°C(TA)

Encapsulation/Housing

4-DFN-EP(8x8)

Country of origin

Japan

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

TK31V60W5,LVQ（MOSFET）ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14916,Price reference "real-time change" China/Hongkong。 TK31V60W5,LVQ package/specs, Download TK31V60W5,LVQ、Datasheet。