MOSFET N CH 100V 60A SOP ADV TPH4R50ANH,L1Q
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Description:
MOSFET N CH 100V 60A SOP ADV
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TPH4R50ANH,L1Q(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90928,Price reference "real-time change" China/Hongkong。 TPH4R50ANH,L1Q package/specs, Download TPH4R50ANH,L1Q、Datasheet。