MOSFET N-CH TK370A60F,S4X(S
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
TK370A60F,S4X(S(MOSFET)ByToshibaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory58110,Price reference "real-time change" China/Hongkong。 TK370A60F,S4X(S package/specs, Download TK370A60F,S4X(S、Datasheet。