BSS816NWH6327XTSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSS816NWH6327XTSA1

Description:

MOSFET N-CH 20V 1.4A SOT323-3

Stock:

66898

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.09

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Parameters

Current at 25 ° C - continuous drain (Id)

1.4A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.8V,2.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

0.6 nC @ 2.5 V

Input capacitance at different Vds (Ciss) (maximum)

180 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

160 mΩ @ 1.4A,2.5V

Power dissipation (maximum)

500mW(Ta)

Vgs (max)

±8V

Vgs (th) (maximum) for different Ids

0.75V @ 3.7µA

packing

TR,CT

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-SOT323

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSS816NWH6327XTSA1.pdf

BSS816NWH6327XTSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66898,Price reference "real-time change" China/Hongkong。 BSS816NWH6327XTSA1 package/specs, Download BSS816NWH6327XTSA1、Datasheet。