SICFET N-CH 1200V 52A TO247-3 AIMW120R045M1XKSA1
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Description:
SICFET N-CH 1200V 52A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolSiC™
DataSheet
AIMW120R045M1XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59029,Price reference "real-time change" China/Hongkong。 AIMW120R045M1XKSA1 package/specs, Download AIMW120R045M1XKSA1、Datasheet。