MOSFET N-CH 600V 4.5A TO252-3 SPD04N60C3ATMA1
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Description:
MOSFET N-CH 600V 4.5A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
SPD04N60C3ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14851,Price reference "real-time change" China/Hongkong。 SPD04N60C3ATMA1 package/specs, Download SPD04N60C3ATMA1、Datasheet。