MOSFET 650V NCH SIC TRENCH IMZA65R048M1HXKSA1
The pictures are for reference only
Description:
MOSFET 650V NCH SIC TRENCH
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMZA65R048M1HXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8819,Price reference "real-time change" China/Hongkong。 IMZA65R048M1HXKSA1 package/specs, Download IMZA65R048M1HXKSA1、Datasheet。