MOSFET N-CH 600V 8.4A TO220 IPAN60R800CEXKSA1
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Description:
MOSFET N-CH 600V 8.4A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPAN60R800CEXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11146,Price reference "real-time change" China/Hongkong。 IPAN60R800CEXKSA1 package/specs, Download IPAN60R800CEXKSA1、Datasheet。