MOSFET N-CH 650V 10.6A TO220-FP IPA65R380E6XKSA1
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Description:
MOSFET N-CH 650V 10.6A TO220-FP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPA65R380E6XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory89687,Price reference "real-time change" China/Hongkong。 IPA65R380E6XKSA1 package/specs, Download IPA65R380E6XKSA1、Datasheet。