GANFET N-CH IGT60R070D1ATMA4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IGT60R070D1ATMA4(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76274,Price reference "real-time change" China/Hongkong。 IGT60R070D1ATMA4 package/specs, Download IGT60R070D1ATMA4、Datasheet。