MOSFET N-CH 100V 9.7A TO220AB IRF520N
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Description:
MOSFET N-CH 100V 9.7A TO220AB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF520N(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34509,Price reference "real-time change" China/Hongkong。 IRF520N package/specs, Download IRF520N、Datasheet。