MOSFET N-CH 30V 80A TO263-3 IPB05N03LB G
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Description:
MOSFET N-CH 30V 80A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB05N03LB G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory91461,Price reference "real-time change" China/Hongkong。 IPB05N03LB G package/specs, Download IPB05N03LB G、Datasheet。