MOSFET P-CH 30V 80A TO262-3 IPI80P03P4L04AKSA1
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Description:
MOSFET P-CH 30V 80A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI80P03P4L04AKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15445,Price reference "real-time change" China/Hongkong。 IPI80P03P4L04AKSA1 package/specs, Download IPI80P03P4L04AKSA1、Datasheet。