MOSFET N-CH 200V 3.8A PQFN IRFH5220TR2PBF
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Description:
MOSFET N-CH 200V 3.8A PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFH5220TR2PBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56099,Price reference "real-time change" China/Hongkong。 IRFH5220TR2PBF package/specs, Download IRFH5220TR2PBF、Datasheet。