MOSFET N-CH 800V 190MA SOT223-4 BSP300H6327XUSA1
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Description:
MOSFET N-CH 800V 190MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP300H6327XUSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73775,Price reference "real-time change" China/Hongkong。 BSP300H6327XUSA1 package/specs, Download BSP300H6327XUSA1、Datasheet。