MOSFET N-CH 500V 7.6A TO262-3 SPI08N50C3HKSA1
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Description:
MOSFET N-CH 500V 7.6A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPI08N50C3HKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8727,Price reference "real-time change" China/Hongkong。 SPI08N50C3HKSA1 package/specs, Download SPI08N50C3HKSA1、Datasheet。