MOSFET N-CH 650V 17.5A TO220-3 IPP65R190CFDAAKSA1
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Description:
MOSFET N-CH 650V 17.5A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolMOS™
DataSheet
IPP65R190CFDAAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10158,Price reference "real-time change" China/Hongkong。 IPP65R190CFDAAKSA1 package/specs, Download IPP65R190CFDAAKSA1、Datasheet。