LOW POWER_LEGACY SPP07N65C3XKSA1
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Description:
LOW POWER_LEGACY
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP07N65C3XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory57384,Price reference "real-time change" China/Hongkong。 SPP07N65C3XKSA1 package/specs, Download SPP07N65C3XKSA1、Datasheet。