IPI70N12S3L12AKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPI70N12S3L12AKSA1

Description:

MOSFET N-CHANNEL_100+

Stock:

34315

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.14

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power dissipation (maximum)

Vgs (max)

Vgs (th) (maximum) for different Ids

packing

bulk,pipe

series

technology

working temperature

Encapsulation/Housing

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

stop production

DataSheet

IPI70N12S3L12AKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34315,Price reference "real-time change" China/Hongkong。 IPI70N12S3L12AKSA1 package/specs, Download IPI70N12S3L12AKSA1、Datasheet。