APT34N80B2C3G
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likeAPT34N80B2C3G
Brand：Microchip
Model：APT34N80B2C3G
stock：7560
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥14.29
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| Installation type | Through-Hole |
| packing | pipe |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | T-MAX™ [B2] |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 800 V |
| Current at 25 ° C - continuous drain (Id) | 34A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 145 mΩ @ 22A,10V |
| Vgs (th) (maximum) for different Ids | 3.9V @ 2mA |
| Gate charge (Qg) at different Vgs (maximum) | 355 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4510 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 417W(Tc) |
Common problem
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