Installation type | Through-Hole |
packing | pipe |
series | HEXFET®, StrongIRFET™ |
Part status | Final sale |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | TO-262-3 |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 195A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 1.95 mΩ @ 100A,10V |
Vgs (th) (maximum) for different Ids | 2.4V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 255 nC @ 4.5 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 15330 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 375W(Tc) |