Installation type | Base installation |
packing | pipe |
series | POWER MOS V® |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-227(ISOTOP®) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 1200 V |
Current at 25 ° C - continuous drain (Id) | 26A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 400 mΩ @ 13A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 5mA |
Gate charge (Qg) at different Vgs (maximum) | 1200 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 18000 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 700W(Tc) |