Installation type | Surface mount |
packing | TR |
series | SymFET™ |
Part status | stop production |
working temperature | -40°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-143 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 6 V |
Current at 25 ° C - continuous drain (Id) | 1.8A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V |
On resistance (maximum) for different Ids and Vgs | 160 mΩ @ 100mA,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | - |
Vgs (max) | 6V |
Input capacitance at different Vds (Ciss) (maximum) | 600 pF @ 5.5 V |
FET function | - |
Power dissipation (maximum) | 568mW(Ta) |