NTMYS2D9N04CLTWG
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likeNTMYS2D9N04CLTWG
Brand：ON
Model：NTMYS2D9N04CLTWG
stock：40058
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | - |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | LFPAK4(5x6) |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 27A(Ta),110A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.8 mΩ @ 40A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 11µA |
| Gate charge (Qg) at different Vgs (maximum) | 35 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2100 pF @ 20 V |
| FET function | - |
| Power dissipation (maximum) | 3.7W(Ta),68W(Tc) |
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