NVMFWS0D5N04XMT1G
Home
Category
MOSFET
NVMFWS0D5N04XMT1G
The pictures are for reference only
like

NVMFWS0D5N04XMT1G

Brand:ON
Model:NVMFWS0D5N04XMT1G
stock:86565
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing 8-DFN(5x6)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 423A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 0.52mOhm @ 50A, 10V
Vgs (th) (maximum) for different Ids 3.5V @ 240µA
Gate charge (Qg) at different Vgs (maximum) 100 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 6250 pF @ 25 V
FET function -
Power dissipation (maximum) 163W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer