Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | D²PAK(TO-263) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 60 V |
Current at 25 ° C - continuous drain (Id) | 75A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 15 mΩ @ 37.5A,5V |
Vgs (th) (maximum) for different Ids | 2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 115 nC @ 5 V |
Vgs (max) | - |
Input capacitance at different Vds (Ciss) (maximum) | 4000 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | - |